Multi-color broadband visible light source via GaN hexagonal annular structure
نویسندگان
چکیده
Multi-color and broadband visible emission was realized thorough the hexagonal annular structure of GaN. The annular structure fabricated by selective-area growth emitted purple, blue and green color-emission from the multi-facets. The hexagonal annular structure provided various sidewalls of {101} and {112} semi-polar facets, and (0001) polar facet. From the cathodoluminescence study, the (0001) plane had the longest wavelength of 525 nm, and the {101} facet of 440 nm peak wavelength had longer wavelength emission than the {112} of 412 nm peak wavelength. The origin of longer wavelength emission of {101} was mostly due to high In-composition, as well as slightly larger well thickness, which means that {101} facet has higher In-incorporation efficiency. Various In-composition of each facet provided multi-color and broadband emission with the international commission on illumination (CIE) of (0.22, 0.45) and high emission efficiency. The hexagonal annular structure becomes building blocks for highly efficient broadband visible lighting sources.
منابع مشابه
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color ...
متن کاملPolarization-free GaN Emitters in the Ultraviolet and Visible Spectra via Heterointegration on CMOS-compatible
This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet and visible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells, respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strong polarization fields exist across the structure contri...
متن کاملApplication of Semiconductor Photocatalysis for Effective Elimination of Organic Contaminants from Sewage
The ZnO/SiO2 semiconductor nanophotocatalysis was synthesized via sol-gel method. Also, theplatinum particles were loaded on the ZnO/SiO2 nanoparticles by photoreductive method. Thestructure of catalyst was confirmed by X-ray diffraction (XRD), scanning electron microscopy(SEM) andfourier transform infrared spectroscopy (FT-IR). The XRD patterns of ZnO particlesdisplayed the nanoparticles have ...
متن کاملPure and Gd3+, Tb3+ and Ho3+-doped As2Ni3O8: A new visible light induced photocatalyst for the photodegradation of malachite green water pollutant
Nanostructured doped As2Ni3O8 samples were synthesized via facile one step solid state reactions at 850 °C for 8 h using As2O3, Ni(NO3)2.6H2O, Gd2O3, Tb2O3 and Ho2O3 raw materials. The synthesized nanomaterials were characterized by powder X-ray diffraction (PXRD) technique. The rietveld analyses showed that the obtained materials were crystallized well in monoclinic crystal structure with the ...
متن کاملPreparation and characterizations of CuO doped ZnO nano-structure for the photocatalytic degradation of 4-chlorophenol under visible light
In the present investigation, a ZnO nanostructure was synthesized by means of precipitation and sonochemical methods. The X-ray diffraction (XRD) pattern indicated that the wurtzite structure of ZnO had a hexagonal symmetry and there was no impurity. The average ZnO particles crystallite size was calculated at about 41 nm. The SEM and TEM images revealed nanostructure ZnO particles with a cauli...
متن کامل